STD17N05 Datasheet, PDF (3/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD17N05/STD17N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t_d(on)
t_r
(di/ d t) o n
Q_g
Q_gs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_DD = 30 V I_D = 8.5 A
R_G = 50 Ω
V_GS = 10 V
(see test circuit figure)
VDD = 40 V ID = 17 A
RG = 50 Ω
VGS = 10 V
(see test circuit figure)
V_DD = 40 V I_D = 17 A V_GS = 10 V
Min.
Typ.
20
120
250
22
8
8
Max.
30
170
30
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 40 V ID = 17 A
RGS = 50 Ω VGS = 10 V
(see test circuit figure)
Min.
Typ.
60
60
120
Max.
90
90
180
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I _SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 17 A VGS = 0
t_rr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
I_SD = 17 A
V_DD = 30 V
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ.
Max.
17
68
Unit
A
A
1.5
V
65
ns
0. 13
µC
4
A
Safe Operating Area
Thermal Impedance
3/10