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| STD16NF06L Datasheet, PDF (3/11 Pages) STMicroelectronics – N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET | |||
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STD16NF06
2 Electrical characteristics
2 Electrical characteristics
( TCASE = 25 °C unless otherwise specified )
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
IDSS
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
Min.
ID = 250µA
VGS= 0
60
VDS = Max Rating
VDS = Max Rating TC=125°C
VGS = ±20V
VDS = VGS
VGS = 10V
ID = 250µA 2
ID = 8A
Typ. Max.
1
10
±100
0.060 0.070
Unit
V
µA
µA
µA
V
â¦
Table 4. Dynamic
Symbol
Parameter
Test Conditions
Min.
gfs Note 5 Forward Transconductance VDS = 25V
ID = 8A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 15V, f = 1MHz, VGS = 0
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD =30
ID = 16A
VGS =10V
Figure 14 on page 7
Typ.
6
400
103
41.5
14.1
2.8
5.4
Max.
Unit
S
pF
pF
pF
nC
nC
nC
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Off voltage Rise Time
FallTime
Test Conditions
VDD = 30V, ID = 8A,
RG = 4.7â¦, VGS = 10V
Figure 13 on page 7
VDD = 30V, ID = 8A,
RG = 4.7â¦, VGS = 10V
Figure 15 on page 7
Min.
Typ.
4
15
Max.
Unit
ns
ns
16
ns
5.5
ns
3/11
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