STD16NE10 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 100V - 0.07ohm - 16A - IPAK/DPAK STripFET MOSFET

STD16NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q_gs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 50 V
ID = 10 A
RG =4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 80 V ID = 20 A VGS = 10 V
Min.
Typ .
17
37
38
10
12
Max.
23
50
50
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
t_{r(Vo f f)}
tf
t_c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 80 V I_D = 20 A
R_G =4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
Typ .
11
18
32
Max.
15
25
44
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 16 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
I_SD = 20 A
di/dt = 100 A/µs
VDD = 50 V Tj = 150 ^oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
16
64
Unit
A
A
1.5
V
110
ns
440
µC
8
A
Safe Operating Area
Thermal Impedance
3/9