STD16NE06 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET

STD16NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 30 V
ID = 10 A
R_G =4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 48 V I_D = 16 A V_GS = 10 V
Min.
Typ.
20
45
25
9.7
6.2
Max.
30
60
35
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
tf
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 48 V I_D = 10 A
RG =4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
8
25
38
Max.
11
34
50
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 16 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 16 A
di/dt = 100 A/µs
V_DD = 30 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
16
64
Unit
A
A
1.5
V
50
ns
115
nC
4.5
A
Safe Operating Area
Thermal Impedance
3/9