STD15N06L Datasheet, PDF (3/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STD15N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t_d(on)
t_r
(di/ d t) o n
Q_g
Q_gs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_DD = 30 V I_D = 7.5 A
R_G = 4.7 Ω
V_GS = 5 V
(see test circuit figure)
VDD = 40 V ID = 15 A
RG = 47 Ω
VGS = 5 V
(see test circuit figure)
V_DD = 40 V I_D = 15 A V_GS = 5 V
Min.
Typ.
15
160
Max.
60
200
Unit
ns
ns
70
A/µs
18
30
nC
8
nC
9
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
t_c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V ID = 15 A
RGS = 47 Ω VGS = 10 V
(see test circuit figure)
Min.
Typ.
52
100
170
Max.
80
140
240
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
I_{S D}
I _SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 15 A VGS = 0
t_rr
Reverse Recovery
Time
Qrr Reverse Recovery
Charge
I_SD = 15 A
V_DD = 25 V
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ.
Max.
15
60
Unit
A
A
1.5
V
60
ns
0. 14
µC
5
A
Safe Operating Area
Thermal Impedance
3/10