STD13N60DM2 Datasheet, PDF (3/16 Pages) STMicroelectronics – Fast-recovery body diode

STD13N60DM2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
IDM⁽¹⁾
PTOT
dv/dt ⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
±25
11
7
44
110
40
50
-55 to 150
V
A
A
W
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 11 A, di/dt ≤ 900 A/μs; VDS peak < V(BR)DSS, VDD=400 V.}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)_{When mounted on FR-4 board of inch², 2oz Cu.}
Value
1.14
50
Unit
°C/W
Symbol
Table 4: Avalanche characteristics
Parameter
IAR Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value Unit
2.5 A
340 mJ
DocID029209 Rev 2
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