STD12NE06L Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET

STD12NE06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 30 V
ID = 8 A
R_G = 4.7 Ω
V_GS = 5 V
(see test circuit, figure 3)
V_DD = 48 V I_D = 16 A V_GS = 5 V
Min.
Typ.
17
38
Max.
25
50
Unit
ns
ns
12
16
nC
6
nC
6
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
tf
t_c
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 48 V
I_D = 16 A
RG = 4.7 Ω
VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
9
18
30
Max.
12
25
45
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 12 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 16 A
V_DD = 25 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
70
0.13
4
Max.
12
48
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area for
Thermal Impedance
3/9