STD10PF06T4 Datasheet, PDF (3/9 Pages) STMicroelectronics – P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAK STripFET™ II POWER MOSFET

STD10PF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 30 V
I_D = 5 A
20
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
40
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 48 V I_D= 10 A V_GS= 10 V
16
21
nC
4
nC
6
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 30 V
I_D = 5 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
V_clamp = 48 V
I_D = 10 A
R_G = 4.7Ω,
V_GS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
40
10
10
17
30
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 10 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 10 A
di/dt = 100A/µs
V_DD = 30 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
260
5.2
Max.
10
40
2.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/9