STD100NH02L Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET

STD100NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 10 V
I_D = 30 A
15
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
200
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 10 V I_D= 60 A V_GS= 10 V
62
84
nC
12
nC
8
nC
Q_oss(6) Output Charge
V_DS= 16 V
V_GS= 0 V
24
nC
Q_gls(7) Third-quadrant Gate Charge VDS< 0 V
V_GS= 10 V
56.5
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 10 V
I_D = 30 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
60
35
Max.
47
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM
Source-drain Current
Source-drain Current (pulsed)
60
A
240
A
V_SD ⁽⁵⁾ Forward On Voltage
I_SD = 30 A
V_GS = 0
1.3
V
t_rr
Reverse Recovery Time
I_SD = 60 A
di/dt = 100A/µs
47
ns
Q_rr
Reverse Recovery Charge
V_DD = 15 V
T_j = 150°C
58
nC
I_RRM
Reverse Recovery Current
(see test circuit, Figure 5)
2.5
A
(1) _{Garanted when external Rg=4.7 Ω and tf < tfmax.}
(²) Value limited by wire bonding
(3) _{Pulse width limited by safe operating area.}
(⁴) Starting T_j = 25 ^oC, I_D = 30A, V_DD = 15V .
.
(5) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(6) _{Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A}
(7) _{Gate charge for synchronous operation}
Safe Operating Area
Thermal Impedance
3/12