STC5NF20V Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 20V - 0.030ohm - 5A TSSOP8 2.7V-DRIVE STripFET™ II POWER MOSFET

STC5NF20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 10 V
I_D = 2.5 A
7
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 4.5 V
33
ns
(Resistive Load, Figure 1)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 16V I_D= 5A V_GS=4.5V
(see test circuit, Figure 2)
8.5
11.5
nC
1.8
nC
2.4
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
t_d(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 10 V
I_D = 2.5 A
R_G = 4.7Ω,
V_GS = 4.5 V
(Resistive Load, Figure 1)
V_clamp = 16 V
I_D = 5 A
R_G = 4.7Ω,
V_GS = 4.5 V
(Inductive Load, Figure 3)
Min.
Typ.
27
10
26
11
21
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 5 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 5 A
di/dt = 100A/µs
V_DD = 10 V
T_j = 150°C
(see test circuit, Figure 3)
Min.
Typ.
26
13
1
Max.
5
20
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8