STC08IE150HV Datasheet, PDF (3/7 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 1500 V - 8A - 0.10 ohm

STC08IE150HV
2 Electrical Characteristics
2 Electrical Characteristics
Table 3.
Symbol
Electrical Characteristics (T_CASE = 25°C; unless otherwise specified)
Parameter
Test Conditions
Min. Typ. Max.
I_CS(SS)
I_BS(OS)
I_SB(OS)
I_GS(OS)
Collector-source current
(V_BS = V_GS = 0)
Base-source current
(I_C = 0, V_GS = 0 V)
Source-base current
(I_C = 0, V_GS = 0)
Gate-source leakage
V_{CS(ON) Collector-source ON voltage}
h_FE DC current gain
V_{BS(ON) Base-source ON voltage}
V_GS(th) Gate threshold voltage
V_CE = 1500V
V_BS(OS) = 30V
V_SB(OS) = 17V
V_GS = ± 17V
V_GS = 10V_ I_C = 8A _ I_B = 1.6A
V_GS = 10V_ I_C = 3A _ I_B = 0.3A
V_GS = 10V_ V_CS = 1V_ I_C = 8A
V_GS = 10V _V_CS = 1V _I_C = 3A
V_GS = 10V_ I_C = 8A_ I_B = 1.6A
V_GS = 10V_ I_C = 2A_ I_B = 0.3A
V_BS = V_GS ______I_B = 250 µA
100
10
100
100
1
1.5
0.7
1.2
4.5
6
9
11
1.6
2
1.1
1.5
2
3
4
Unit
µA
µA
µA
nA
V
V
V
V
V
C_{ISS Input capacitance}
V_CS =25V _ _ _ _ _ _ f =1MHz
V_GS=V_CB=0V
810
pF
Q_{GS(tot) Gate-source charge}
V_CS=15V _ _ _ _ _ _ V_GS=10V
V_CB=0V _ _ _ _ _ _ _ I_C =1.4A
45.6
nC
INDUCTIVE LOAD
t_{s Storage time}
t_f Fall time
V_GS =10V_ _ _ _ _ _ R_G =47Ω
V_Clamp =1200V _ _ _ t_p =4µs
I_C =4A _ _ _ _ _ _ _ _I_B =0.8A
690
ns
10
ns
INDUCTIVE LOAD
t_{s Storage time}
t_f Fall time
V_GS =10V_ _ _ _ _ _ R_G =47Ω
V_Clamp =1200V _ _ _ t_p =4µs
I_C =4A_ _ _ _ _ _ _ _ I_B =0.4A
340
ns
10
ns
Collector-source dynamic
V_CS(dyn) voltage
(500ns)
V_CC =V_Clamp =600V
V_GS =10V _ _ _ _ _ _ I_C =2A
I_B = 0.4A _ _ _ __ _ _ R_G =47Ω
t_peak =500ns _ __ _ _ I_Bpeak =4A
2.8
V
Collector-source dynamic
V_CS(dyn) voltage
(1µs)
V_CC =V_Clamp =600V
V_GS =10V _ _ _ _ _ _ I_C =2A
I_B = 0.4A _ _ _ _ _ _ _R_G =47Ω
t_peak =500ns _ _ _ _ _I_Bpeak =4A
1.7
V
V_CSW
Maximum collector-source
voltage switched without
snubber
R_G =47Ω _ _ _ _ _ _ _h_FE =5
I_C = 8A
1500
V
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