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| STC05DE120HV Datasheet, PDF (3/9 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT® 1200V - 5A - 0.18 ohm | |||
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STC05DE120HV
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICS(SS)
Collector-source current
(VBS =VGS =0V)
VCS(SS) =1200V
100 µA
IBS(OS)
Base-source current
(IC =0, VGS =0V)
VBS(OS) =30V
10 µA
ISB(OS)
Source-base current
(IC =0, VGS =0V)
VSB(OS) =9V
100 µA
Gate-source leakage
IGS(OS) (VBS =0V)
VGS = ± 20V
500 nA
VCS(ON)
Collector-source ON
voltage
VGS =10V IC =5A IB =1A
VGS =10V IC =2.5A IB =0.25A
0.9 1.5 V
0.7 1.2 V
hFE DC current gain
VCS =1V VGS =10V IC =5A
3
5
VCS =1V VGS =10V IC =2.5A 7
10
VBS(ON)
Base-source ON
voltage
VGS =10V IC =5A IB =1A
VGS =10V IC =2.5A IB =0.25A
1.3 1.7 V
1 1.4 V
VGS(th) Gate threshold voltage VBS =VGS IB =250µA
1.5 2.2 3
V
Ciss Input capacitance
VCS =25V f =1MHz VGS=0V
750
pF
QGS(tot) Gate-source Charge
VCS=15V
VCB=0V
VGS=10V
IC =1.8A
12.5
nC
Maximum collector-
VCSW source voltage switched RG =47⦠hFE =5 IC = 5A 1200
V
without snubber
Note (1) Pulsed duration = 300 µs, duty cycle â¤1.5%
3/9
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