STC03DE220HP Datasheet, PDF (3/7 Pages) STMicroelectronics – Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω

STC03DE220HP
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Electrical characteristics
Electrical characteristics
(T_case = 25 °C; unless otherwise specified)
Table 5. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_CS(SS)
Collector-source
current (V_BS =V_GS = 0)
V_CS(SS) = 2200 V
100 µA
Base-source current
I_{BS(OS) (IC =0, VGS = 0)}
V_BS(OS) = 30 V
10 µA
I_SB(OS)
Source-base current
(I_C =0, V_GS = 0)
V_SB(OS) = 9 V
100 µA
Gate-source leakage
I_{GS(OS) (VBS = 0)}
V_GS = ± 20 V
500 nA
V_CS(ON)
Collector-source ON
voltage
V_GS = 10 V I_C = 1.5 A I_B = 0.15 A
V_GS = 10 V I_C = 3 A I_B = 0.6 A
0.2
0.25
V
V
h_FE DC current gain
V_CS = 1 V V_GS =10 V I_C =1.5 A
V_CS = 1 V V_GS =10 V I_C =3 A
15
10
V_BS(ON)
Base-source ON
voltage
V_GS = 10 V I_C = 1.5 A I_B = 0.15 A
V_GS =10 V I_C =3 A I_B = 0.6 A
0.82
1
V
V
V_GS(th) Gate threshold voltage V_BS = V_GS I_B = 250 µA
1.5 2.2 3
V
Input capacitance
C_iss
(V_GS = V_CB = 0)
V_CS = 25 V f = 1 MHz
750
pF
Q_GS(tot)
Gate-source Charge
(V_CB = 0)
V_CS =15 V
I_C = 1.8 A
V_GS = 10 V
12.5
nC
t_s
t_f
INDUCTIVE LOAD
Storage time
Fall time
V_GS = 10 V
V_Clamp = 1760 V
I_C = 1.5 A
R_G = 47 Ω
t_p = 4 µs
I_B = 0.3 A
1040
20
ns
ns
V_CC = V_Clamp = 400 V
V_CS(dyn)
Collector-source
dynamic voltage
(500 ns)
V_GS = 10 V
I_B = 0.3 A
I_C = 1.5 A
R_G = 47 Ω
7.6
V
t_peak = 500 ns
I_Bpeak = 3 A
V_CC = V_Clamp = 400 V
V_CS(dyn)
Collector-source
dynamic voltage
(1 µs)
V_GS = 10 V
I_B = 0.3 A
I_C = 1.5 A
R_G = 47 Ω
5.8
V
t_peak = 500 ns
I_Bpeak = 3 A
Maximum collector-
V_CSW
source voltage
switched without
R_G = 47 Ω h_FE = 5 I_C = 3 A 2200
V
snubber
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