STBV42D Datasheet, PDF (3/8 Pages) STMicroelectronics – Low spread of dynamic parameters

STBV42D
2
Electrical characteristics
Electrical characteristics
T_case = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector cut-off current
I_CES
(V_BE = 0)
V_CE = 700 V
V_CE = 700 V
T_C = 125 °C
1 mA
5 mA
Emitter cut-off current
I_EBO
) ^VCEO(sus)
t(s ⁽¹⁾
(I_C = 0)
Collector-emitter sustaining
voltage (I_B = 0)
duc ^{VCE(sat) (1)}
Collector-emitter saturation
voltage
Pro _VBE(sat) ⁽¹⁾
Base-emitter saturation
voltage
solete ^{hFE (1) DC current gain}
V_EB = 9 V
I_C = 1 mA
I_C = 0.25 A
I_C = 0.5 A
I_C = 0.75 A
I_C = 0.25 A
I_C = 0.5 A
I_C = 5 mA,
I_C = 0.4 A,
I_C = 0.8 A
1 mA
400
V
I_B = 50 mA
I_B = 125 mA
I_B = 250 mA
0.2 0.5 V
0.3 1 V
0.4 1.5 V
I_B = 50 mA
I_B = 125 mA
1V
1.2 V
V_CE = 2 V
12
V_CE = 5 V
10
30
V_CE = 5 V
5
20
Ob _{Inductive Load}
) ^{- tf}
Fall time
I_C = 0.25 A _ V_clamp = 300 V
I_B(on) = -I_B(off) = 50 mA
L = 3 mH
Figure 2
0.3
µs
t(s V_F
Diode forward voltage
I_F = 350 mA
Obsolete ^{Produc 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %}
1.7 V
Doc ID 17236 Rev 2
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