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| STBV32G Datasheet, PDF (3/11 Pages) STMicroelectronics – High voltage fast-switching NPN power transistor | |||
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STBV32
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
VCEO(sus)(1)
Collector-emitter
voltage (IB = 0)
sustaining
VCE(sat) (1)
Collector-emitter saturation
voltage
VBE(sat) (1)
Base-emitter saturation
voltage
hFE DC current gain
VCE = 700 V
VCE = 700 V
IE = 10 mA
IC = 10 mA
IC = 0.5 A
IC = 1 A
IC = 1.5 A
IC = 0.5 A
IC = 1 A
IC = 0.5 mA
IC = 0.5 A
IC = 1 A
TC = 125 °C
9
400
IB = 100 mA
IB = 250 mA
IB = 500 mA
IB = 100 mA
IB = 250 mA
VCE = 2 V
20
VCE = 2 V
8
VCE = 2 V
5
1 mA
5 mA
18 V
V
0.5 V
1V
1.5 V
1V
1.2 V
25
25
Resistive load
tr
Rise time
ts
Storage time
tf
Fall time
Inductive Load
ts
Storage time
IC = 1 A ___ _
tp = 25 µs
IB1 = -IB2 = 200 mA
VCC = 125 V
Figure 12.
IC = 1 A
IB1 = 200 mA
L = 50 mH
Figure 13.
Vclamp = 300 V
VBE(off) = -5 V
RBB = 0
1 µs
4 µs
0.7 µs
0.8
µs
1. Pulsed duration = 300 µs, duty cycle â¤1.5%
3/11
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