STB9NK90Z Datasheet, PDF (3/16 Pages) STMicroelectronics – N-CHANNEL 900V - 1.1Ohm - 8A - TO-220/FP-D2PAK-TO-247 Zener-Protected SuperMESH MOSFET

STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20KΩ)
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25°C
I_D
I_DM(2)
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
P_TOT
Total dissipation at T_C = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt⁽³⁾ Peak diode recovery voltage slope
V_ISO Insulation withstand voltage (DC)
T_J
Operating junction temperature
T_stg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤10A, di/dt ≤200A/µs,V_DD ≤V_(BR)DSS, T_j ≤T_JMAX
Value
TO-220/D²PAK/
TO-247
Unit
TO-220FP
900
900
± 30
8
5
32
160
1.28
4
4.5
--
8⁽¹⁾
5⁽¹⁾
32⁽¹⁾
40
0.32
2500
V
V
V
A
A
A
W
W/°C
KV
V/ns
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
R_thj-case
R_thj-a
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
TO-220
D²PAK
TO-20FP
0.78
3.1
62.5
TO-247
0.78
50
Unit
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AS
(pulse width limited by Tj Max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, I_d=I_ar, V_DD=50V)
Value
8
300
Unit
A
mJ
3/16