STB9NK60ZD_08 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 600 V - 0.85 Ω - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh™ Power MOSFET

STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK/TO-220 TO-220FP
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuos) at T_C = 25 °C
Drain current (continuos) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
V_ESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)
dv/dt ⁽³⁾ Peak diode recovery voltage slope
V_ISO
T_j
T_stg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 7 A, di/dt ≤ 500 A/µs, V_DD = 80%V_(BR)DSS
Table 3. Thermal data
600
± 30
7
7 ⁽¹⁾
4.3
4.3 ⁽¹⁾
28
28 ⁽¹⁾
125
30
1
0.24
4000
15
--
2500
-55 to 150
Symbol
Parameter
Value
D²PAK/TO-220 TO-220FP
Thermal resistance junction-pcb Max
Rthj-pcb
(when mounted on minimum footprint)
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
30
--
1
4.16
62.5
300
Unit
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Unit
°C/W
°C/W
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)}
Max value
Unit
7
A
235
mJ
3/16