STB9NK50ZT4 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-CHANNEL 500V - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH MOSFET

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V_(BR)DSS Drain-source
I_D = 1 mA, V_GS = 0
500
Breakdown Voltage
I_DSS
Zero Gate Voltage
V_DS = Max Rating
1
Drain Current (V_GS = 0)
V_DS = Max Rating, T_C = 125 °C
50
I_GSS
Gate-body Leakage
V_GS = ± 20V
±10
Current (V_DS = 0)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 100µA
3
3.75
4.5
R_DS(on)
Static Drain-source On
Resistance
V_GS = 10V, I_D = 3.6 A
0.72 0.85
DYNAMIC
Symbol
Parameter
g_fs (1) Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C_{oss eq.} (3) Equivalent Output
Capacitance
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DS = 15 V_, I_D = 3.6 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
V_GS = 0V, V_DS = 0V to 400V
Test Conditions
V_DD = 250 V, I_D = 3.6 A
R_G = 4.7Ω V_GS = 10 V
(Resistive Load see, Figure 3)
V_DD = 400V, I_D = 7.2 A,
V_GS = 10V
Min.
Typ.
5.3
910
125
30
75
Typ.
17
20
32
6
18
Max.
Max.
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 250 V, I_D = 3.6 A
R_G = 4.7Ω V_GS = 10 V
(Resistive Load see, Figure 3)
V_DD = 400V, I_D = 7.2 A,
R_G = 4.7Ω, V_GS = 10V
(Inductive Load see, Figure 5)
Min.
Typ.
45
22
15
13
30
Max.
Unit
V
µA
µA
µA
V
Ω
Unit
S
pF
pF
pF
pF
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM (2)
Source-drain Current
Source-drain Current (pulsed)
7.2
A
28.8
A
V_SD (1) Forward On Voltage
I_SD = 7.2 A, V_GS = 0
1.6
V
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 7.2 A, di/dt = 100A/µs
V_DD = 40 V, T_j = 150°C
(see test circuit, Figure 5)
238
ns
1.5
µC
12.6
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0 to 80%
V_DSS.
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