STB95NF03 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0065 ohm - 95A D²PAK STripFET™ II POWER MOSFET

STB95NF03
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON ^(*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
t_r
Turn-on Time
Rise Time
V_DD = 15 V
I_D = 47.5 A
20
ns
R_G = 4.7 Ω
V_GS = 10 V
195
ns
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=15V I_D=95A V_GS=10V
59
70
nC
18
nC
21
nC
SWITCHING OFF^(*)
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 20 V
R_G = 4.7Ω,
I_D = 47.5 A
V_GS = 10 V
Min.
Typ.
35
35
Max.
Unit
ns
ns
SOURCE DRAIN DIODE^(*)
Symbol
Parameter
Test Conditions
I_SD
I_SDM ^(•)
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 95 A V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(•) _{Pulse width limited by Tjmax}
I_SD = 95 A di/dt = 100A/µs
V_DD = 20 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
60
120
4
Max.
95
320
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/9