STB85NF55L_09 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 55 V, 0.0060 Ω, 80 A, TO-220, D2PAK STripFET™ II Power MOSFET

STB85NF55L, STP85NF55L
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS
I_D ⁽¹⁾
I_D(1)
I_DM(2)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C=100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
dv/dt ⁽³⁾ Peak diode recovery voltage slope
E_AS ⁽⁴⁾ Single pulse avalanche energy
T_J Operating junction temperature
T_stg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 80 A, di/dt ≤ 300 A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
4. Starting T_J = 25 °C, I_D = 40 A, V_DD = 40 V
Value
55
± 15
80
80
320
300
2.0
10
980
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case Thermal resistance junction-case max.
R_thj-amb Thermal resistance junction-ambient max.
R_thj-pcb Thermal resistance junction-pcb max.⁽¹⁾
T_l Maximum lead temperature for soldering purpose
1. When mounted on 1inch² FR-4 2Oz Cu board
Value
D²PAK
TO-220
0.5
62.5
35
300
Unit
°C/W
°C/W
°C/W
°C
Doc ID 8544 Rev 8
3/14