STB80NF03L-04 Datasheet, PDF (3/7 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWER MOSFET

STB80NF03L-04
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 40 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig. 3)
V_DD = 24 V I_D = 80 A V_GS = 4.5 V
Min.
Typ.
50
230
100
22
42
Max.
135
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
t_{r (Voff)}
t_f
t_c
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 15 V
I_D = 40 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
V_clamp = 24 V
I_D = 80 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Induct ive Load, see fig. 5)
Min.
Typ.
220
130
65
250
340
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I_SD
I_SDM (•)
V_SD (∗)
t_rr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I_SD = 80 A V_GS = 0
I_SD = 80 A
V_DD = 15 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
80
320
1.5
70
0.14
4
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
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