STB75N20 Datasheet, PDF (3/16 Pages) STMicroelectronics – N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET™ Power MOSFET

STB75N20 - STP75N20 - STW75N20
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Derating factor
P_TOT
T_J
Tstg
Total dissipation at T_C = 25°C
Operating junction temperature
Storage temperture
1. I_SD < 20A, di/dt < 100A/µs, V_DD = 80% V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
R_thJC
R_thJ-pcb ⁽¹⁾
R_thJA
T_l
Thermal resistance junction-case Max
Thermal resistance junction-pcb Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
1. When mounted on inch²FR-4 board (t < 10µs)
Value
Unit
200
V
200
V
± 20
V
75
A
47
A
300
A
1.52
190
W
-50 to 150
°C
Value
TO-220/D²PAK TO-247
0.66
34
--
62.5
40
300
Unit
°C/W
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Max value
Unit
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_J max)
37
A
Single pulse avalanche energy
E_AS
(starting T_J= 25°C, Id= Iar, Vdd=50V)
205
mJ
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