STB6NK60Z_0711 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600 V - 1 Ω - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™ Power MOSFET

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
Derating factor
V_ESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
dv/dt^{(3) Peak diode recovery voltage slope}
V_ISO Insulation withstand voltage (DC)
T_j
Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 6 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
T_l
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220/D²/I²PAK TO-220FP
600
V
± 30
V
6
6 ⁽¹⁾
A
3.8
3.8 ⁽¹⁾
A
24
24 ⁽¹⁾
A
110
30
W
0.88
0.24 W/°C
3500
V
4.5
V/ns
--
2500
V
-55 to 150
°C
Value
Unit
TO-220/D²/I²PAK TO-220FP
1.14
4.2
°C/W
62.5
°C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting T_J= 25 °C, I_D= I_AR, V_DD= 50 V)
Value
Unit
6
A
210
mJ
3/17