STB60NE03L-10 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STB60NE03L-10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
P a ra m et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q_gs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 30 A
RG =4.7 Ω
VGS = 5 V
(see test circuit, figure 3)
VDD = 24 V ID = 60 A VGS = 5 V
Min.
Typ .
35
240
Max.
50
320
Unit
ns
ns
62
85
nC
20
nC
31
nC
SWITCHING OFF
S ymb ol
t_{r(Vo f f)}
tf
t_c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 24 V I_D = 60 A
R_G =4.7 Ω V_GS = 5 V
(see test circuit, figure 5)
Min.
Typ .
60
80
150
Max.
80
110
200
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 60 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
I_SD = 60 A
di/dt = 100 A/µs
VDD = 24 V Tj = 150 ^oC
(see test circuit, figure 5)
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
60
240
Unit
A
A
1.5
V
70
ns
0.13
µC
4
A
Safe Operating Area
Thermal Impedance
3/8