STB5NB60 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

STB5NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
Pa ram et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 2.5 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 480 V I_D =5 A V_GS = 10 V
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 480 V I_D =5 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 5 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 5 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
12
10
Max.
Unit
ns
ns
21
30
nC
7.6
nC
7.5
nC
Min.
T yp.
8
5
14
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
5
20
Unit
A
A
1.6
V
610
ns
3.6
µC
11.7
A
Safe Operating Area
Thermal Impedance
3/9