STB50NE08 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STB50NE08
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
t_r
P a ra m et er
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Qgs Gate-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
VDD = 40 V
ID = 25 A
RG =4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
V_DD = 64 V I_D = 50 A V_GS = 10 V
Min.
Typ .
37
95
85
19
28
Max.
50
130
110
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
t_f
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 64 V ID = 50 A
R_G =4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
Typ .
12
30
50
Max.
17
40
68
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I_SD
ISDM (•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 50 A VGS = 0
t_rr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 50 A
di/dt = 100 A/µs
VDD = 30 V Tj = 150 ^oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
Max.
50
200
Unit
A
A
1.5
V
100
ns
400
nC
8
A
Safe Operating Area
Thermal Impedance
3/8