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| STB45NF06_10 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET | |||
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STB45NF06, STP45NF06
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
PTOT
dv/dt(2)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
TJ
Operating junction temperature
Tstg
Storage temperature
1. Pulse width limited by safe operating area.
2. ISD â¤38A, di/dt â¤300A/µs, VDD â¤V(BR)DSS, Tj â¤TJMAX.
Value
60
± 20
38
26
152
80
0.53
8
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction - pcb max
Tl
Maximum lead temperature for soldering
purpose
1. When mounted on 1 inch2 FR-4 2 oz Cu board.
D2PAK
35
Value
1.87
62.5
TO-220
300
Unit
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
19
A
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=40 V)
260
mJ
Doc ID 7433 Rev 5
3/15
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