STB3N62K3_09 Datasheet, PDF (3/20 Pages) STMicroelectronics – N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK

STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
Gate source ESD
V_{ESD(G-S) (HBM-C = 100 pF, R = 1.5 kΩ)}
dv/dt ⁽³⁾ Peak diode recovery voltage slope
V_ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
T_stg Storage temperature
T_j Max. operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 2.7 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Value
TO-220 DPAK
Unit
TO-220FP
D²PAK IPAK
620
± 30
2.7
1.7
10.8
45
0.36
2.7 ⁽¹⁾
1.7 ⁽¹⁾
10.8⁽¹⁾
20
0.16
V
V
A
A
A
W
W/°C
2500
V
9
V/ns
--
2500
V
-55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max
R_thj-pcb
Thermal resistance junction-pcb
max
R_thj-amb
Thermal resistance junction-amb
max
T_l
Maximum lead temperature for
soldering purpose
TO-220 D²PAK DPAK IPAK TO-220FP Unit
2.78
6.25 °C/W
--
50
--
--
°C/W
62.5
100
62.5 °C/W
300
°C
Doc ID 14894 Rev 2
3/20