STB3N62K3 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK

STB/D/F/P/U3N62K3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
D²PAK
DPAK
IPAK
TO-220FP
Unit
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
620
± 30
2.7
1.7
10.8
45
0.36
2.7 ⁽¹⁾
1.7 ⁽¹⁾
10.8⁽¹⁾
20
0.16
V
V
A
A
A
W
W/°C
Gate source ESD
V_{ESD(G-S) (HBM-C = 100 pF, R = 1.5 kΩ)}
dv/dt ⁽³⁾ Peak diode recovery voltage slope
2500
9
V
V/ns
Insulation withstand voltage (RMS) from all
V_ISO ^{three leads to external heat sink}
--
(t = 1 s; TC = 25 °C)
2500
V
T_stg Storage temperature
-55 to 150
T_j Max. operating junction temperature
150
1. Limited by package
2. Pulse width limited by safe operating area
3. I_SD ≤ 2.7 A, di/dt ≤ 200 A/µs, V_DD = 80% V_(BR)DSS
Table 3. Thermal data
Symbol
Parameter
TO-220 D²PAK DPAK IPAK TO-220FP
°C
°C
Unit
R_thj-case
Thermal resistance junction-case
max
2.78
6.25 °C/W
R_thj-pcb
Thermal resistance junction-pcb
max
--
50
--
--
°C/W
R_thj-amb
Thermal resistance junction-amb
max
62.5
100
62.5 °C/W
T_l
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Max value
Unit
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T_j max)
2.7
A
Single pulse avalanche energy
E_{AS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)}
100
mJ
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