STB36NF02L Datasheet, PDF (3/6 Pages) STMicroelectronics – N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET

STB36NF02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 15 V
ID = 40 A
R_G = 4.7 Ω
V_GS = 4.5 V
(Resistive Load, see fig. 3)
V_DD = 16 V I_D = 36 A V_GS = 10 V
Min.
Typ.
20
270
19
3
5
Max.
21
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 40 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
35
60
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD =36 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 36 A
V_DD = 15 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
50
80
2
Max.
36
144
1.5
Unit
A
A
V
ns
nC
A
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