English
Language : 

STB20NK50Z Datasheet, PDF (3/13 Pages) STMicroelectronics – N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
◁
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 100 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 8.5 A
0.23 0.27
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
VDS = 15 V, ID = 8.5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
VGS = 0V, VDS = 0V to 640V
Typ.
13
2600
328
72
187
Max. Unit
S
pF
pF
pF
pF
SWITCHING ON/OFF
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 250 V, ID = 8.5 A
RG = 4.7Ω , VGS = 10 V
(Resistive Load see, Figure 3)
VDD = 400 V, ID = 17 A,
VGS = 10 V
Min.
Typ.
28
20
70
15
85
15.5
42
Max. Unit
ns
ns
ns
ns
119
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
17
A
68
A
VSD (1) Forward On Voltage
ISD = 17 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17 A, di/dt = 100 A/µs
VR = 100 V, Tj = 25°C
(see test circuit, Figure 5)
355
ns
3.90
µC
22
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17 A, di/dt = 100 A/µs
VR = 100 V, Tj = 150°C
(see test circuit, Figure 5)
440
ns
5.72
µC
26
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/13
 ▷