STB18N20 Datasheet, PDF (3/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB18N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t_d(on)
tr
(di/ dt) _on
Q_g
Qgs
Q_gd
P a ram et er
Turn-on T ime
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_DD = 100 V
RG = 9.1 Ω
I_D = 18 A
VGS = 10 V
V_DD = 100 V
R_G = 9.1 Ω
I_D = 18 A V_GS = 10 V
VDD = Max Rating x 0.8
I_D = 18 A
V_GS = 10 V
Min.
Typ .
20
75
470
57
11
26
M a x.
30
105
80
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
t_{r(Vo f f)}
t_f
tc
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
V_DD = 160 V
R_G = 9.1 Ω
I_D = 18 A
V_GS = 10 V
Min.
Typ .
40
35
75
M a x.
55
50
105
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
P a ram et er
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward O n Volt age
I_SD = 18 A
trr
Reverse Recovery
ISD = 18 A
Time
Qrr
Reverse Recovery
Charge
V_DD = 100 V
IRRM Reverse Recovery
Cu r re nt
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
V_GS = 0
di/dt = 100 A/µs
T_j = 150 ^oC
Min.
Typ .
300
3.3
22
M a x.
18
72
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/10