STB180N10F3 Datasheet, PDF (3/12 Pages) STMicroelectronics – N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET D2PAK, TO-220

STB180N10F3 - STP180N10F3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS Gate-source voltage
I_D ⁽¹⁾ Drain current (continuous) at T_C = 25°C
I_D ⁽¹⁾ Drain current (continuous) at T_C=100°C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25°C
Derating factor
dv/dt Peak diode recovery voltage slope
E_AS ⁽³⁾ Single pulse avalanche energy
T_j
Operating junction temperature
T_stg storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj=25°C, Id=60 A, Vdd=40 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-a
Thermal resistance junction-ambient
max
Rthj-pcb⁽¹⁾
Thermal resistance junction-ambient
max
T_l
Maximum lead temperature for
soldering purpose
1. When mounted on FR-4 board, on 1inch², 2oz Cu.
Value
100
± 20
120
120
480
315
2.1
TBD
TBD
-55 To 175
TO-220
0.48
62.5
D²PAK
--
--
35
300
--
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
°C/W
°C
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