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STB13007DT4 Datasheet, PDF (3/10 Pages) STMicroelectronics – High voltage fast-switching NPN power transistor
STB13007DT4
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
TJ
Collector-emitter voltage (VBE = -1.5V)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Base current
Base peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
__max
__max
Electrical ratings
Value
Unit
700
V
400
V
9
V
8
A
16
A
4
A
8
A
80
W
-65 to 150
°C
150
°C
Value
1.56
62.5
Unit
°C/W
°C/W
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