SMBYT01 Datasheet, PDF (3/5 Pages) STMicroelectronics – FAST RECOVERY RECTIFIER DIODES

SMBYT01
Fig. 1: Low frequency power losses versus
average current.
Fig. 2: Peak current versus form factor.
1.8^PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.2
=0.05
=0.1 _=0.2
=0.5
T
IF(av)(A)
=tp/T
0.4 0.6 0.8 1.0
=1
tp
1.2
35 ^IM(A)
30
25
20
15
P = 0. 5 W
T
IM
=tp/T
tp
10
P = 1. 5 W
P = 2 .5 W
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3: Non repetitive surge peak forward current
versus overload duration.
Fig. 4: Relative variation of thermal impedance
junction to lead versus pulse duration.
IM(A)
12
10
8
6
4
2
0⁰.001
0.01
t(s)
0.1
IM
t
=0.5
K
Zth(j-c) (tp. )
1 ^{K =} _Rth(j-c)
=0 .5
=0.2
Tc=25 ^oC
Tc = 7 5 ^o C
Tc=110 ^oC
1
10
0.1 ^{=0 . 1}
Single pulse
0.01
0.001
0.01
t p (s )
0.1
T
=tp/T
1
tp
10
Fig. 5: Voltagedrop versus forward current.
(Maximum values)
Fig. 6: Average current versus ambient
temperature. (duty cycle : 0.5)
3.0 ^VFM(V)
2.7
2.4 _Tl=100 o_C
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0.01
0.1
I _FM(A)
1
10 20
IF( _{av) (A)}
1.2
1.0
0.8
Rth(j-a)=Rth(j-l)
Rth(j-a)=75 ^o C/W
1cm² Cu
0.6
=0.5
T
0.4
0.2
0.0
0
=tp/T
tp
Tamb(o C)
20 40 60 80 100 120 140 160
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