SD2943 Datasheet, PDF (3/14 Pages) STMicroelectronics – RF Power Transistor HF/VHF/UHF N - Channel MOSFETs

SD2943
1 Electrical Data
1 Electrical Data
1.1 Maximum Rating
Table 1. Absolute Maximum Rating (T_CASE = 25°C)
Symbol
Parameter
Value
Unit
V_(BR)DSS(1) Drain Source Voltage
130
V
V_DGR(2) ^{Drain-Gate Voltage (R}GS ^{= 1MΩ)}
130
V
V_GS
Gate-Source Volatge
±20
V
I_D
Drain Current
40
A
P_DISS Power Dissipation
648
W
T_j
Max. Operating Junction Temperature
200
°C
E_AS
Avalanche Energy, Single Pulse (I_D = 60A)
1500
mJ
E_AR(2) Avalanche Energy, Repetitive
50
mJ
T_STG Storage Temperature
-65 to +150
°C
1. T_J = 150 °C
2. Repetitive rating: Pulse width limited by maximum junction temperature; Repetitive avalanche causes additional power
losses that can be calculated as: PAV = EAR * f
1.2 Thermal Data
Table 2. Thermal data
Symbol
Parameter
R_thJC Junction to Case thermal resistance
Value
0.27
Unit
°C/W
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