SA12B5 Datasheet, PDF (3/5 Pages) STMicroelectronics – SCHOTTKY ARRAYS

Fig1-1: Clamping forward voltage versus peak
pulse current (typical values, low level).
SA12B5 / SA16B3 / SA16B6
Fig1-2: Clamping forward voltage versus peak
pulse current (typical values, high level).
Ipp(A)
1E+0 _tp=2.5µs
1E-1
1E-2 _Tj=85°C
Tj=25°C
Ipp(A)
5.0
Tj=25°C
tp=2.5µs
1.0
1E-3
Tj=-40°C
Vcl(V)
Vcl(V)
1E-4
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
1
2
3
4
5
6
7
Fig 2: Leakage current versus junction tempera- Fig 3: Non repetitive surge peak forward current
ture (typical values).
versus pulse duration (rectangular waveform).
IR(µA)
1E+2
VR=7.5V
1E+1
1E+0
1E-1
1E-2
0
25
IFSM(A)
10
5
Tj(°C)
50
75
2
1
100
125
1
Tj initial =25°C
tp(µs)
10
100
1000
Fig 4: Non repetitive surge peak forward current Fig 5: Capacitance between input or output and
versus initial junction temperature.
ground versus applied voltage (typical values).
IFSM[Tj] / IFSM[Tj=25°C]
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Tj(°C)
25
50
75
Ci/o(pF)
30
Vcc=5V
28
F=1MHz
Vosc=30mV
26
24
22
20
18
16
Vi/o-gnd(V)
100
125
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
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