RBO40 Datasheet, PDF (3/10 Pages) STMicroelectronics – REVERSED BATTERY AND OVERVOLTAGE PROTECTION

Symbol
V_RM31/V_RM32
V_BR31/V_BR32
I_R31/I_R32
V_CL31/V_CL32
V_F13
I_PP
αT
C₃₁/C₃₂
C₁₃
Parameter
Stand-off voltage Transil T1 / Transil T2.
Breakdown voltage Transil T1 / Transil T2.
Leakage current Transil T1 / Transil T2.
Clamping voltage Transil T1 / Transil T2.
Forward voltage drop Diode D1.
Peak pulse current.
Temperature coefficient of V_BR.
Capacitance Transil T1 / Transil T2.
Capacitance of Diode D1
RBO40-40G / RBO40-40T
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < T_amb < + 85°C)
Symbol
V_{F 13}
V_{F 13}
V_{F 13}
V_{F 13}
C₁₃
Test Conditions
I_F = 40 A
I_F = 20A
I_F = 1 A
I_F = 100 mA
F = 1MHz V_R= 0 V
Min.
Value
Typ.
3000
Max.
1.9
1.45
1
0.95
Unit
V
V
V
V
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < T_amb < + 85°C)
Symbol
V_{BR 31}
V_{BR 31}
I_{RM 31}
I_{RM 31}
V_{CL 31}
αT
C ₃₁
Test Conditions
I_R = 1 mA
I_R = 1 mA, T_amb = 25°C
V_RM = 20 V
V_RM = 20 V, T_amb = 25°C
I_PP = 37.5A, Tj initial = 25°C
Temperature coefficient of V_BR
F = 1MHz V_R = 0 V
10/1000µs
Min.
22
24
Value
Typ.
3000
Max.
35
32
100
10
40
9
Unit
V
V
µA
µA
V
10^-4/°C
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < T_amb < + 85°C)
Symbol
Test Conditions
V_{BR 32}
V_{BR 32}
I_{RM 32}
I_{RM 32}
V_{CL 32}
αT
C₃₂
I_R = 1 mA
I_R = 1 mA, T_amb = 25°C
V_RM = 20 V
V_RM = 20 V, T_amb = 25°C
I_PP = 20 A (note 1)
Temperature coefficient of V_BR
F = 1MHz V_R = 0 V
Note 1 : One pulse, see pulse definition in load dump test generator circuit.
Min.
22
24
Value
Typ.
8000
Max.
35
32
100
10
40
9
Unit
V
V
µA
µA
V
10^-4/°C
pF
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