PD85015-E Datasheet, PDF (3/13 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

STAP85015-E STAP85015S-E
1
Electrical data
Electrical data
1.1
Maximum ratings
Table 2. Absolute maximum ratings (T_CASE = 25 °C)
Symbol
Parameter
Value
Unit
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70 °C)
Max. operating junction temperature
Storage temperature
40
V
-0.5 to +15
V
5
A
59
W
165
°C
-65 to +150
°C
1.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Value
1.6
Unit
°C/W
Doc ID 14466 Rev 2
3/13