P0102AL Datasheet, PDF (3/7 Pages) STMicroelectronics – 0.25A SCRs

P01xxxL
Figure 3: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
6
5
4
3
IGT
2
1
0
-40
-20
Tj(°C)
0
20
40
60
IH & IL
RGK = 1kΩ
80 100 120 140
Figure 5: Relative variation of holding current
versus gate-cathode resistance (typical
values)
IH[RGK] / IH[RGK=1kΩ]
20
18
16
14
12
10
8
6
4
2
0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
Figure 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical
values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
Tj = 125°C
VD = 0.67 x VDRM
1.0
0.1
0
RGK(kΩ)
200 400 600 800 1000 1200 1400 1600 1800 2000
Figure 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values)
dV/dt[CGK] / dV/dt[RGK=1kΩ]
10
VD = 0.67 x VDRM
Tj = 125°C
8
RGK = 1kΩ
6
4
2
CGK(nF)
0
0
1
2
3
4
5
6
7
Figure 8: Surge peak on-state current versus
number of cycles
ITSM(A)
7
6
5
4
3
2
Repetitive
1
Tamb=25°C
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
tp=10ms
One cycle
1000
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