M28LV16 Datasheet, PDF (3/17 Pages) STMicroelectronics – 16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

M28LV16
Table 2. Absolute Maximum Ratings ⁽¹⁾
Symbol
Parameter
Value
Unit
T_A
Ambient Operating Temperature
– 40 to 85
°C
T_STG
Storage Temperature Range
– 65 to 150
°C
VCC
Supply Voltage
– 0.3 to 6.5
V
VIO
Input/Output Voltage
– 0.3 to VCC +0.6
V
VI
Input Voltage
– 0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) ⁽²⁾
4000
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500Ω; MIL-STD-883C, 3015.7
Table 3. Operating Modes ⁽¹⁾
Mode
Standby
Output Disable
Write Disable
Read
Write
Note: 1. 0 = VIL; 1 = VIH; X = VIL or VIH.
E
G
W
1
X
X
X
1
X
X
X
1
0
0
1
0
1
0
DQ0 - DQ7
Hi-Z
Hi-Z
Hi-Z
Data Out
Data In
PIN DESCRIPTION
Addresses (A0-A10). The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E). The chip enable input must be
low to enable all read/write operations. When Chip
Enable is high, power consumption is reduced.
Output Enable (G). The Output Enable input con-
trols the data output buffers and is used to initiate
read operations.
Data In/ Out (DQ0 - DQ7). Data is written to or read
from the M28LV16 through the I/O pins.
Write Enable (W). The Write Enable input controls
the writing of data to the M28LV16.
Ready/Busy (RB). Ready/Busy is an open drain
output that can be used to detect the end of the
internal write cycle.
It is offered only with the TSOP28 package. The
reader should refer to the M28LV17 datasheet
for more information about the Ready/Busy
function.
OPERATION
In order to prevent data corruption and inadvertent
write operations during power-up, a Power On
Reset (POR) circuit resets all internal programming
cicuitry. Access to the memory in write mode is
allowed after a power-up as specified in Table 7.
Read
The M28LV16 is accessed like a static RAM. When
E and G are low with W high, the data addressed
is presented on the I/O pins. The I/O pins are high
impedance when either G or E is high.
Write
Write operations are initiated when both W and E
are low and G is high.The M28LV16 supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurs last and the Data on the rising edge of E or
W which ever occurs first. Once initiated the write
operation is internally timed until completion.
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