LET9120 Datasheet, PDF (3/11 Pages) STMicroelectronics – RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

LET9120
1
Electrical data
1.1
Maximum ratings
T_CASE = 25 °C
Table 2. Absolute maximum ratings
Symbol
Parameter
V_(BR)DSS
V_GS
I_D
P_DISS
T_J
T_STG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T_C = 70 °C)
Max. operating junction temperature
Storage temperature
1.2
Thermal data
Table 3. Thermal data
Symbol
Parameter
R_thJC
Junction - case thermal resistance
Electrical data
Value
Unit
80
V
- 0.5 / + 15
V
18
A
200
W
200
°C
- 65 to + 150
°C
Value
0.65
Unit
°C/W
Doc ID 15509 Rev 5
3/11