L149H Datasheet, PDF (3/6 Pages) STMicroelectronics – SHORT CIRCUIT PROTECTION

L149
ELECTRICAL CHARACTERISTCS (T_j = 25 °C, V_S = ± 16V)
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
V_S Supply Voltage
± 20
V
I_d
Quiescent Drain Current
V_S = ± 16V
30
mA
I_in
Input current
V_S = ± 16V; V_i = 0V
200 400
µA
hFE DC current drain
V_S = ± 16V; I_O = 3A
6000 10000
-
G_V Voltage gain
V_S = ± 16V; I_O = 1.5A
1
-
V_CEsat Saturation voltage (for each
transistor)
t(s) ^{VOS Input offset voltage}
uc ^{VINH Inhibit input voltage (pins 1-3)}
Prod _t(s) ^RINH
te ^{c SR}
le du _B
Inhibit input resistance
Slew rate
Power bandwidth
I_O = 3A
V_S = ± 16V
ON condition
OFF condition
V_O = ± 10V, d = 1%, R_L = 8Ω
3.5
V
0.3
V
± 0.3
V
± 1.8
V
2.0
KΩ
30
V/µs
200
KHZ
- ^{Obso te Pro APPLICATION INFORMATION}
O_O^b_b^s_s^o_o^l_l^e_e^t_t^ee ^{PPrroodduucctt((ss)) - Obsole Figure 1. High slew-rate power operational amplifier (SR = 13V/µs)}
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