IRF840_02 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh™II MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 250 V, I_D = 3.5 A
R_G = 4.7Ω V_GS = 10 V
(see test circuit, Figure 3)
V_DD = 400V, I_D = 7 A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 400V, I_D = 7 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 8 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 7 A, di/dt = 100A/µs
V_DD = 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
IRF840
Min. Typ. Max. Unit
10
ns
21
ns
29.6
39
nC
4.9
nC
13.9
nC
Min.
Typ.
9
9
19
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
8
A
32
A
1.6
V
384
ns
2.2
µC
11.8
A
Safe Operating Area
Thermal Impedence
3/8