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| HD1760JL_07 Datasheet, PDF (3/10 Pages) STMicroelectronics – Very high voltage NPN power transistor for high definition and slim CRT display | |||
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HD1760JL
2
Electrical characteristics
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector cut-off current
ICES
(VBE = 0)
IEBO
Emitter cut-off current
(IC = 0)
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
VEBO
Emitter-base voltage (IC =
0)
VCE = 1700V
VCE = 1700V___TC = 125°C
VEB = 5V
IC = 10mA
800
IE = 10mA
10
0.2 mA
2 mA
10 µA
V
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 18A _____
IB = 4.5A
2V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 18A _____ IB = 4.5A
1.5 V
hFE
DC current gain
Inductive load
ts
Storage time
tf
Fall time
Inductive load
ts
Storage time
tf
Fall time
IC = 2A ____ _ VCE = 5V
IC = 18A ____ VCE = 5V 5
30
8.5
IC = 12A _ __ fh = 32 KHz
IB(on) = 1A _IB(off) = -6.9A
2.6
µs
VCE(fly) = 1340V
300
ns
VBE(off) = -2.7V
LBB(on) = 0.8µH
IC = 8A ___ fh = 100kHz
IB(on) = 1.3A IB(off) = -5.8A
2
µs
VCE(fly) = 1300V
110
ns
VBE(off) = -2.7V
LBB(on) = 0.25µH
1. Pulsed duration = 300 ms, duty cycle £1.5%.
3/10
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