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| HD1760JL Datasheet, PDF (3/8 Pages) STMicroelectronics – High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display | |||
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HD1760JL
2 Electrical Characteristics
2 Electrical Characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Collector Cut-off Current
ICES
(VBE = 0)
VCE = 1700V
VCE = 1700V___
_TC = 125°C
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
VCEO(sus) Collector-Emitter
Note: 1 Sustaining Voltage (IB = 0)
IC = 10mA
800
VEBO Emitter-Base Voltage (IC = 0) IE = 10mA
10
VCE(sat) Collector-Emitter Saturation
Note: 1 Voltage
IC = 18A _____
IB = 4.5A
VBE(sat)
Note: 1
Base-Emitter Saturation Voltage IC = 18A _____
IB = 4.5A
hFE DC Current Gain
IC = 2A _____ VCE = 5V
IC = 18A ____ VCE = 5V
5
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 12A ____ _ __ fh = 32 KHz
IB(on) = 1A ___ _ _IB(off) = -6.9A
VCE(fly) = 1340V __VBE(off) = -2.7V
LBB(on) = 0.8μH
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 8A ____ _ __ fh = 100kHz
IB(on) = 1.3A ___ _ _IB(off) = -5.8A
VCE(fly) = 1300V __VBE(off) = -2.7V
LBB(on) = 0.25μH
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
Typ.
30
2.6
300
2
110
Max.
0.2
2
10
2
1.5
8.5
Unit
mA
mA
μA
V
V
V
V
μs
ns
μs
ns
3/8
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