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| HD1750JL_07 Datasheet, PDF (3/10 Pages) STMicroelectronics – Very high voltage NPN power transistor for high definition and slim CRT display | |||
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HD1750JL
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1700V
VCE = 1700V; TC = 125°C
0.2 mA
2 mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
10 µA
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC = 10mA
800
V
VEBO(1)
Emitter-base saturation
voltage (IC = 0)
IE = 10mA
10
V
VCE(sat)(1)
Collector-emitter saturation
voltage
IC = 12A; IB = 3A
3
V
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 12A; IB = 3A
0.95 1.5 V
hFE
DC current gain
IC = 1A;
IC = 12A;
VCE = 5V
30
VCE = 5V 5.5
8.5
Inductive load
ts
Storage time
tf
Fall time
IC = 12A;
IB(on)= 1.8A
IB(off)= -7.25A;
VCE(fly)= 1320V;
VBE(off)= -2.7V;
LBB(on)= 0.8µH;
fh= 31520Hz
3 3.6 µs
300 450 ns
Inductive load
ts
Storage time
tf
Fall time
IC = 6.5A;
IB(on)= 1.1A
IB(off)= -5.25A;
VCE(fly)= 1220V;
VBE(off)= -2.7V;
LBB(on)= 0.25µH;
fh= 100kHz
1.6 2 µs
110 220 ns
1. Pulsed: pulse duration = 300µs, duty cycle < 2%
3/10
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