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| HD1750JL Datasheet, PDF (3/10 Pages) STMicroelectronics – High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display | |||
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HD1750JL
2 Electrical Characteristics
2 Electrical Characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Collector Cut-off Current
ICES
(VBE = 0)
VCE = 1700V
VCE = 1700V___
_TC = 125°C
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
VCEO(sus) Collector-Emitter
Note: 1 Sustaining Voltage (IB = 0)
IC = 10mA
800
VEBO Emitter-Base Voltage (IC = 0) IE = 10mA
10
VCE(sat) Collector-Emitter Saturation
Note: 1 Voltage
IC = 12A _____
IB = 3A
VBE(sat)
Note: 1
Base-Emitter Saturation Voltage IC = 12A _____
IB = 3A
hFE DC Current Gain
IC = 1A _
IC = 12A ___
____ VCE = 5V
_ VCE = 5V 5.5
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 12A ___ _ __ fh = 31250Hz
IB(on) = 1.8A__ _ _IB(off) = -7.25A
VCE(fly) = 1320V __VBE(off) = -2.7V
LBB(on) = 0.8μH
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 6.5A __ _ __ fh = 100kHz
IB(on) = 1.1A __ _ _IB(off) = -5.25A
VCE(fly) = 1220V __VBE(off) = -2.7V
LBB(on) = 0.25μH
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
Typ.
0.95
30
3
300
1.6
110
Max.
0.2
2
10
3
1.5
8.5
3.6
450
2
220
Unit
mA
mA
μA
V
V
V
V
μs
ns
μs
ns
3/10
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