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| HD1530FX Datasheet, PDF (3/7 Pages) STMicroelectronics – High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display | |||
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HD1530FX
2 Electrical Characteristics
2 Electrical Characteristics
Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off Current
(VBE = 0)
VCE = 1500V
VCE = 1500V____TC = 125°C
0.2 mA
2
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
10
μA
VCEO(SUS) Collector-Emitter
IC = 10mA
700
V
Note: 1 Sustaining Voltage (IB = 0)
VEBO Emitter-Base Voltage
IE = 10mA
10
V
VCE(sat) Collector-Emitter saturation
Note: 1 Voltage
IC = 13A _____ IB = 3.25A
2
V
VBE(sat) Base-Emitter saturation Voltage
Note: 1
IC = 13A _____ IB = 3.25A
1
1.5
V
hFE DC Current Gain
IC = 1A _____ VCE = 5V
IC = 13A ____ VCE = 5V
30
5.5
9
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 12A ____ _ fh = 32KHz
IB(on) = 1.4A ___ IB(off) = -6A
3.2
μs
230
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 12A _____ fh = 48KHz
IB(on) = 2A ____ IB(off) = -6.7A
2.8
μs
200
ns
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 6.5A _____ fh = 100KHz
IB(on) = 0.8A ___ IB(off) = -4.5A
1.4
μs
100
ns
Note: 1 Pulsed duration = 300 μs, duty cycle â¤1.5%.
3/7
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