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HCC4073B Datasheet, PDF (3/10 Pages) STMicroelectronics – AND GATES | |||
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HCC/HCF4073B/4081B/4082B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Symbol Parameter
Test Conditions
VI
VO |IO | VD D
(V) (V) (µA) (V)
T Low*
Min. Max.
Value
25 °C
Min. Typ. Max.
T High*
Min. Max.
Unit
VIH Input High
Voltage
0.5/4.5 < 1 5 3.5
3.5
1/9 < 1 10 7
7
3.5
7
V
1.5/13.5 < 1 15 11
11
11
VIL Input Low
Voltage
4.5/0.5 < 1 5
1.5
9/1 < 1 10
3
1.5
1.5
3
3
V
13.5/1.5 < 1 15
4
4
4
I OH Output
0/ 5 2.5
Drive
Current
HCC 0/ 5 4.6
Types 0/10 9.5
5 â2
5 â 0.64
10 â 1.6
â 1.6 â 3.2
â 0.51 â 1
â 1.3 â 2.6
â 1.15
â 0.36
â 0.9
0/15 13.5
15 â 4.2
â 3.4 â 6.8
â 2.4
mA
0/ 5 2.5
5 â 1.53
â 1.36 â 3.2
â 1.1
HCF 0/ 5 4.6
Types 0/10 9.5
5 â 0.52
10 â 1.3
â 0.44 â 1
â 1.1 â 2.6
â 0.36
â 0.9
0/15 13.5
15 â 3.6
â 3.0 â 6.8
â 2.4
I OL Output
0/ 5 0.4
Sink
Current
HCC
Types
0/10
0.5
5 0.64
0.51 1
0.36
10 1.6
1.3 2.6
0.9
0/15 1.5
15 4.2
3.4 6.8
2.4
mA
0/ 5 0.4
5 0.52
0.44 1
0.36
HCF
Types
0/10
0.5
10 1.3
1.1 2.6
0.9
0/15 1.5
15 3.6
3.0 6.8
2.4
I IH, IIL Input
Leakage
HCC
Types
0/18
18
Current HCF
Any Input
Types 0/15
15
± 0.1
± 0.3
±10â 5 ± 0.1
±10â 5 ± 0.3
±1
µA
±1
CI Input Capacitance
Any Input
5 7.5
pF
* TLow = â 55°C for HCC device : â 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both â1â and â0â level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, typical temperature
coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns, RL = 200kâ¦)
Symbol
Parameter
tPHL , t PL H Propagation Delay Time
Test Conditions
V al ue
V D D (V) Min. Typ. Max.
5
125 250
10
60 125
Unit
ns
15
45 90
t T L H, t THL Transition Time
5
100 200
10
50 100
ns
15
40 80
3/10
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